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| Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3297 DESCRIPTION With TO-220Fa package Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter ABSOLUTE MAXIMUM RATINGS (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 30 30 5 3 15 150 -55~150 ae ae UNIT V V V A W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=1mA , IE=0 IE=1mA , IC=0 IC=2A ;IB=0.2A IC=0.5A ; VCE=5V VCB=30V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=3A ; VCE=5V IC=0.5A ; VCE=5V 70 20 100 MIN 30 30 5 TYP. 2SC3297 SYMBOL VCEO VCBO VEBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V V V 1.0 1.0 10 10 280 |I |I V V A A MHz JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3297 Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) JMnic |
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